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SOLD OUT! A20368A - (PKG 10) 1N5818RL 1A 30V Schottky Rectifier (On Semi)
The 1N5818RL is a 1A 30V Schottky rectifier. The 1N5818RL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
The 1N5818RL is a 1A 30V Schottky rectifier. The 1N5818RL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
$1.22
Original: $3.50
-65%SOLD OUT! A20368A - (PKG 10) 1N5818RL 1A 30V Schottky Rectifier (On Semi)—
$3.50
$1.22Description
The 1N5818RL is a 1A 30V Schottky rectifier. The 1N5818RL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
Features:
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency. Sold in a package of 10.
Datasheet Available:On Semiconductor 1N5818RL
DO-41 package. Manufactured by On Semiconductor.
