
A10678 - RCP111D Silicon NPN Transistor
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678
Original: $2.49
-65%$2.49
$0.87Description
Features:
High Collector-Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
Low Collector-Base Capacitance: Ccb = 3pF Max @ VCB = 20V
TO-202 package.
A10678












