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A10604 - 2SD2136 Silicon NPN Triple Diffused Transistor (Motorola)
2SD2136 silicon NPN triple diffusion planar type transistor for use in power amplification.
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
2SD2136 silicon NPN triple diffusion planar type transistor for use in power amplification.
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
$1.45
A10604 - 2SD2136 Silicon NPN Triple Diffused Transistor (Motorola)—
$1.45
Description
2SD2136 silicon NPN triple diffusion planar type transistor for use in power amplification.
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
Features:
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
Allowing supply with the radial taping
TO-126 package. Manufactured by Motorola.
A10604
